43.31 Bluetooth Low Energy RF Characteristics

Table 43-38. Bluetooth Low Energy RF Characteristics
AC Characteristics			Standard Operating Conditions: V_DDIO = V_DDANA 1.9-3.6V (unless otherwise stated) Operating Temperature: -40°C ≤ T_A ≤ +85°C for Industrial Temp -40°C ≤ TA ≤ +125°C for Extended Temp
Param. No.	Symbol	Characteristics	Min.	Typ.	Max.	Units	Conditions
BTG1	FREQ	Frequency range of operation	2402	—	2480	MHz	—
BTTX1	TXPWR:MPA	Bluetooth transmit power MPA	—	11.67	—	dBm	—
BTTX2	TXPWR:LPA	Bluetooth transmit power LPA	—	3.95	—	dBm	—
BTX3	TXIB:1 Mbps	In-band emission for FTX ± -2 MHz	—	-32	—	dBm	—
BTX3	TXIB:1 Mbps	In-band emission for FTX ± -(3+N) MHz	—	-45	—	dBm	—
BTX4	TXIB:2MBPS	In-band emission for FTX ± -4 MHz	—	-43	—	dBm	—
		In-band emission for FTX ± -5 MHz	—	-48	—	dBm	—
		In-band emission for FTX ± -(6+N) MHz	—	-51	—	dBm	—
BTRX1	RXSENSE	Receiver sensitivity at 1 Mbps	—	-95.6	—	dBm	—
		Receiver sensitivity at 2 Mbps	—	-92.45	—	dBm	—
		Receiver sensitivity at S = 8	—	-102.28	—	dBm	—
		Receiver sensitivity at S = 2	—	-98.9	—	dBm	—
BTRX2	MAXINSIG	Maximum input signal level at 1 Mbps	—	0	—	dBm	—
		Maximum input signal level at 2 Mbps	—	0	—	dBm
		Maximum input signal level at S = 2	—	0	—	dBm
		Maximum input signal level at S = 8	—	0	—	dBm
BTRX3	CI1M:COCH	C/I Co channel rejection	—	13	—	dB	—
	CI1M: ± -1 MHz	C/I adjacent channel rejection	—	14	—	dB	—
	CI1M: ± -2 MHz	C/I adjacent channel rejection	—	13	—	dB	—
	CI1M:ADJ(3+n)	C/I alternate channel rejection	—	21	—	dB	—
	CI1M:IMG	C/I image frequency rejection	—	15	—	dB	—
	CI1M:IMG ± -1 MHz	C/I adjacent channel to image freq rejection	—	16	—	dB	—
BTRX4	CIS2:COCH	C/I Co channel rejection	—	11	—	dB	—
	CIS2: ± -1 MHz	C/I adjacent channel rejection	—	17	—	dB	—
	CIS2: ± -2 MHz	C/I adjacent channel rejection	—	17	—	dB	—
	CIS2:ADJ(3+n)	C/I alternate channel rejection	—	19	—	dB	—
	CIS2:IMG	C/I image frequency rejection	—	14	—	dB	—
	CIS2:IMG ± -1 MHz	C/I adjacent channel to image freq rejection	—	18	—	dB	—
BTRX5	CIS8:COCH	C/I Co channel rejection	—	5	—	dB	—
	CIS8: ± -1 MHz	C/I adjacent channel rejection	—	13	—	dB	—
	CIS8: ± -2 MHz	C/I adjacent channel rejection	—	12	—	dB	—
	CIS8:ADJ(3+n)	C/I alternate channel rejection	—	12	—	dB	—
	CIS8:IMG	C/I image frequency rejection	—	9	—	dB	—
	CIS2:IMG ± -1 MHz	C/I adjacent channel to image freq rejection	—	17	—	dB	—
BTRX6	CI2M:COCH	C/I Co channel rejection	—	13	—	dB	—
	CI2M: ± -2 MHz	C/I adjacent channel rejection	—	17	—	dB	—
	CI2M: ± -4 MHz	C/I adjacent channel rejection	—	19	—	dB	—
	CI2M:ADJ(6+2n)	C/I alternate channel rejection	—	19	—	dB	—
	CI2M:IMG	C/I image frequency rejection	—	16	—	dB	—
	CI2M:IMG ± -2 MHz	C/I adjacent channel to image freq rejection	—	18	—	dB	—
BTRX7	BLOCK1M:<2 GHZ	Blocking performance from 30-2 GHz	—	20	—	dB	—
	BLOCK1M:2 GHZ<SIG<2399 MHz	Blocking performance from 2003-2399 MHz	—	14	—	dB	—
	BLOCK1M:2484 MHZ<SIG<2977 MHz	Blocking performance between 2484-2997 MHz	—	20	—	dB	—
	BLOCK1M:3 GHZ<SIG<12.75 GHz	Blocking performance between 3-12.5 GHz	—	20	—	dB	—
BTRX8	BLE1M:INTERMOD	Inter modulation performance for BLEM	—	14.5	—	dB	—
BTRX8	BLE2M:INTERMOD	Inter modulation performance for BLEM	—	21.5	—	dB	—
Note: Measured at 25℃, averaged across all voltages and channels. Measured on a board with the reference schematic. All measurement across voltage based on the SIG specifications. The specified value is the limit above the SIG specifications. PDU length = 37, channels = 2402/2426/2440/2480 MHz.

Table 43-39. Bluetooth Low Energy LPA RF Characteristics
AC Characteristics			Standard Operating Conditions: V_DDIO = V_DDANA 1.9V to 3.6V (unless otherwise stated) Operating temperature -40°C ≤ T_A ≤ +85°C for Industrial -40°C ≤ T_A ≤ +125°C for Extended Temp
Param. No.	Symbol	Characteristics	Min.	Typ	Max.	Units	Conditions
BTLG1	FREQ	Frequency range of operation	2400	—	2480	MHz	—
BTLTX2	TXPWR:LPA	Bluetooth transmit power LPA	—	5.47	—	dBm	—
BTLX3	TXIB:1MBPS	In-band emission for FTX ± 2 MHz	—	-40	—	dBm	—
BTLX3	TXIB:1MBPS	In-band emission for FTX ± (3+N) MHz	—	-49	—	dBm	—
BTX4	TXIB:2MBPS	In-band emission for FTX ± 4 MHz	—	-46	—	dBm	—
		In-band emission for FTX ± 5 MHz	—	-51	—	dBm	—
		In-band emission for FTX ± (6+N) MHz	—	-54	—	dBm	—
BTLRX1	RXSENSE	Receiver sensitivity at 1Mbps	—	-97	—	dBm	—
		Receiver sensitivity at 2 Mbps	—	-94	—	dBm	—
		Receiver sensitivity at S = 8	—	-104	—	dBm	—
		Receiver sensitivity at S = 2	—	-100	—	dBm	—
BTLRX2	MAXINSIG	Maximum Input signal level at 1 Mbps	—	0	—	dBm	—
		Maximum Input signal level at 2 Mbps	—	0	—	dBm	—
		Maximum Input signal level at S = 2	—	0	—	dBm	—
		Maximum Input signal level at S = 8	—	0	—	dBm	—
Note: Measured at 25℃, averaged across all voltages and channels. Measured on a board with the reference schematic. All measurement across voltage based on the SIG specifications. The specified value is the limit above the SIG specifications. PDU length = 37, channels = 2402/2426/2440/2480 MHz.

Table 43-40. Bluetooth Low Energy RF Current Characteristics
AC Characteristics					Standard Operating Conditions: V_DDIO = V_DDANA 1.9-3.6V (unless otherwise stated) Operating Temperature: -40°C ≤ T_A ≤ +85°C for Industrial Temp -40°C ≤ T_A ≤ +125°C for Extended Temp
Param. No.	Symbol	Characteristics	RF Power	CPU Frequency	Min.	Typ.	Max.	Units	Conditions
IBLETX1	IDDTXMPA	Current consumption with output power in DC-DC mode 1 Mbps	+12 dBm	64 MHz	—	42.8	—	mA	—
IBLETX4	IDDTXMPA	Current consumption at +12 dBm output power in MLDO mode	+12 dBm	64 MHz	—	96.7	—	mA	—
IBLETX7	IDDTXLPA	Current consumption at +4 dBm output power in DC-DC mode 1 Mbps	4 dBm	64 MHz	—	24.9	—	mA	—
IBLETX10	IDDTXLPA	Current consumption at +4 dBm output power in MLDO mode	4 dBm	64 MHz	—	55.5	—	mA	—
IBLETX7	IDDTXLPA0	Current consumption at +0 dBm output power in DC-DC mode 1 Mbps	0 dBm	64 MHz	—	22.7	—	mA	—
IBLETX10	IDDTXLPA0	Current consumption at 0 dBm output power in MLDO mode	0 dBm	64 MHz	—	47.6	—	mA	—
IBLERX1	IDDRXBLE1M	Current consumption at RX signal level -80 dBm in DC-DC mode	-80 dBm	64 MHz	—	20.6	—	mA	—
IBLERX4	IDDRXBLE1M	Current consumption at RX signal level -80 dBm in MLDO mode	-80 dBm	64 MHz	—	40.6	—	mA	—
Note: Current consumption is measured on a board based upon the Microchip Technology Reference Design. Current consumption is for the entire SoC (including the MCU), measured at the input power rail. Current reported is the average of the current during the transmit or receive burst (exclude off cycle of the transmit/receive operation).

Table 43-41. Bluetooth Low Energy RF Current LPA Characteristics
AC Characteristics					Standard Operating Conditions: V_DDIO = V_DDANA 1.9-3.6V (unless otherwise stated) Operating Temperature: -40°C ≤ T_A ≤ +85°C for Industrial Temp -40°C ≤ T_A ≤ +125°C for Extended Temp
Param. No.	Symbol	Characteristics	RF Power	CPU Frequency	Min.	Typ.	Max.	Units	Conditions
IBLETX1	IDDTXMPA	Current consumption with output power 5.5 dBm in DC-DC mode 1 Mbps	+5.5 dBm	64 MHz	—	24.1	—	mA	V_DD = 3.3V
IBLETX4	IDDTXMPA	Current consumption at +5.5 dBm output power in MLDO mode	+5.5 dBm	64 MHz	—	46.9	—	mA	V_DD = 3.3V
IBLETX7	IDDTXLPA	Current consumption at +0 dBm output power in DC-DC mode 1 Mbps	0 dBm	64 MHz	—	20.6	—	mA	V_DD = 3.3V
IBLETX10	IDDTXLPA	Current consumption at +0 dBm output power in MLDO mode 1 Mbps	0 dBm	64 MHz	—	40.4	—	mA	V_DD = 3.3V
IBLETX7	IDDTXLPA0	Current consumption at -5 dBm output power in DC-DC mode 1 Mbps	-5 dBm	64 MHz	—	19.2	—	mA	V_DD = 3.3V
IBLETX10	IDDTXLPA0	Current consumption at -5 dBm output power in MLDO mode 1 Mbps	-5 dBm	64 MHz	—	37.5	—	mA	V_DD = 3.3V
IBLERX1	IDDRXBLE1M	Current consumption at RX signal level -80 dBm in DC-DC mode	-80 dBm	64 MHz	—	21.2	—	mA	V_DD = 3.3V
IBLERX4	IDDRXBLE1M	Current consumption at RX signal level -80 dBm in MLDO mode	-80 dBm	64 MHz	—	39.9	—	mA	V_DD = 3.3V

Figure 43-30. Module Bluetooth Low Energy Receive Sensitivity vs Temperature

Note:

Bluetooth Low Energy receive sensitivity is measured across temperature at 3.6V, 2440 MHz, uncoded data at 1 Ms/s.
PDU length = 37.
Sensitivity is measured according to the SIG specifications.

Figure 43-31. Module Bluetooth Low Energy Receive Sensitivity vs Frequency

Note:

Bluetooth Low Energy sensitivity is measured across channels at 3.6V at 25℃, uncoded data at 1 Ms/s.
PDU length = 37.
Sensitivity is measured according to the SIG specifications.

Figure 43-32. Bluetooth Low Energy 1M CI Margin

Note:

Bluetooth Low Energy 1M C/I Margin is measured at 2440 MHz at 25℃, 3.6V, uncoded data at 1 Ms/s.
Reported C/I margin is the margin above the C/I specifications from SIG.

Figure 43-33. Bluetooth Low Energy Receive Sensitivity vs Voltage

Note:

Bluetooth Low Energy receive sensitivity is measured at 2440 MHz at 25℃, uncoded data at 1 Ms/s.
PDU length = 37.
Sensitivity is measured according to the SIG specifications.

Figure 43-34. Bluetooth Low Energy Receive Sensitivity vs Temperature

Note:

Bluetooth Low Energy receive sensitivity is measured across channels at 3.6V, 2440 MHz, uncoded data at 1 Ms/s.
PDU length = 37.
Sensitivity is measured according to the SIG specifications.

Figure 43-35. Bluetooth Low Energy Receive Sensitivity vs Frequency

Note:

Bluetooth Low Energy receiver sensitivity is measured across channels at 3.6V at 25℃, uncoded data at 1 Ms/s.
PDU length = 37.
Sensitivity is measured according to the SIG specifications.

Figure 43-36. Bluetooth Low Energy Receive Current vs Temperature

Note:

Bluetooth Low Energy receive current is measured at 3.3V (Buck mode), uncoded data at 1 Ms/s with LNA configured at maximum gain.
PDU length = 37.
Current is measured on input power rail to SoC (includes processor current as well).

Figure 43-37. Bluetooth Low Energy Transmit Power vs Frequency

Note:

Bluetooth Low Energy transmit power is measured across frequency after transmit power calibration at 3.3V (Buck mode).
Transmit power is measured after the PA matching and LPF.

Figure 43-38. Bluetooth Low Energy Transmit Power vs Transmit Power Level

Note:

Bluetooth Low Energy transmit power is measured at 2440 MHz after transmit power calibration.
Transmit power is measured on board based on Microchip Technology Reference Design.
Transmit power is measured after PA match and LPF.

Figure 43-39. Bluetooth Low Energy Transmit Power vs VDD Supply Voltage

Note:

Bluetooth Low Energy transmit power is measured across voltage after transmit power calibration.
Transmit power is measured after calibration at +12 dBm (± 0.5 dBm).
Transmit power is measured on board based on the Microchip Reference Design.
Transmit power is measured after the LPA and PA match section.

Figure 43-40. Bluetooth Low Energy Transmit Power vs. Temperature

Note:

Bluetooth Low Energy transmit power is measured across temperature after transmit power calibration at 3.6V and 2440 MHz.
Temperature power compensation is triggered before power measurement.
Transmit power is measured after the PA matching and LPF.

Figure 43-41. Bluetooth Low Energy Transmit Current vs Temperature

Note:

Bluetooth Low Energy transmit current is measured at 3.3V (Buck mode) at 2440 MHz across temperature.
Transmit current is measured after calibration at +12 dBm (± 0.5 dBm).
Current is measured on input power rail to SoC.