48.29 Non-Volatile Memory Controller (NVM) Electrical Specifications

Table 48-41. Flash NVM AC Electrical Specifications
AC CHARACTERISTICSStandard Operating Conditions: VDDIO = AVDD 1.75V to 3.63V, VDDREG = 1.75V to 1.85V (unless otherwise stated)

Operating temperature:

-40°C ≤ TA ≤ +85°C for Industrial

Param. No.SymbolCharacteristicsMin.TypicalMax.UnitsConditions
NVM_1FRETENFlash Data Retention20——YrsUnder all conditions less than Absolute Maximum Ratings specifications
NVM_3EP (2)Cell Endurance (Flash Erase and Wite Operation) (2)20k——Cycles
NVM_5FREADFlash Read0 Wait States——50MHzFCR.CTRLA.AUTOWS = 0
1 Wait States——90
2 Wait States——130
3 Wait States——140
4 Wait States——145
5 Wait States——150
NVM_7TFWProgram Cycle Time Write Double Word——20µsUnder all conditions less than Absolute Maximum Ratings specifications
NVM_8TFPPPre-Program Double Word——3.5µs
NVM_9TCEErase Chip——20ms
NVM_11TFEPErase Page——20ms
NVM_13IDDPROGSupply Current during Programming——PAI_403mAVDDIOx = 3.3V
Note:
  1. Maximum Flash operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. Theses tables provide the device maximum operating frequency defined by the field FWS of the FCW CTRLA register when automatic wait states (AUTOWS) is disabled. This field defines the number of Wait states required to access the Embedded Flash Memory.
  2. Cell Endurance is reached with Flash pre-programming option disabled. Enabling such option will improve the Cell Endurance but slow-down the programming time.