When ‘0’, all outputs function
normally; when ‘1’, all SDRAM outputs are disabled, removing output
buffer current. This feature is used for IDD characterization of
read current and must not be used in normal
operation.
Bit 11 – TDQS Termination Data Strobe
When enabled (‘1’), TDQS
provides additional termination resistance outputs that may be
useful in some system configurations. Refer to the SDRAM memory
device data sheet for details.
Bit 9 – RTT2 On-Die
Termination
Selects the resistance for SDRAM
on-die termination. For all bits RTTx, valid values are as follows.
All other settings are reserved and must not be
used.
Value
Description
0
ODT
disabled
1
RZQ/4
2
RZQ/2
3
RZQ/6
4
RZQ/12
5
RZQ/8
Bit 7 – LEVEL Write Leveling Enable
Enables write-leveling when set.
Bit 6 – RTT1 On-Die
Termination
Selects the resistance for SDRAM
on-die termination. See RTT2.
Bit 5 – DIC1 Output Driver Impedance Control
Controls the output drive
strength. For all bits DICx, valid values are as
follows.
Value
Description
0
RZQ/6
1
RZQ/7
2
Reserved
3
Reserved
Bits 4:3 – AL[1:0] Posted CAS Additive Latency
Setting additive latency that
allows read and write commands to be issued to the SDRAM earlier
than normal (refer to the SDRAM memory device data sheet for
details).
Value
Description
0
0 (AL
disabled)
1
CL - 1
2
CL - 2
3
Reserved
Bit 2 – RTT0 On-Die
Termination
Selects the effective resistance
for SDRAM on-die termination. See RTT2.
The online versions of the documents are provided as a courtesy. Verify all content and data in the device’s PDF documentation found on the device product page.