43.28 Flash NVM Electrical Specifications

Table 43-40. Flash NVM AC Electrical Specifications
AC CHARACTERISTICS				Standard Operating Conditions: VDD and VDDIO 2.7V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
Param. No.	Symbol	Characteristics		Min.	Typical	Max.	Units	Conditions
NVM_1	F_RETEN	Flash Data Retention		20	—	—	Yrs	Under all conditions less than Absolute Maximum Ratings specifications
NVM_3	EP	Cell Endurance (Flash Erase and Wite Operation)		25000	—	—	Cycles
NVM_5	F_READ	Flash Read	0 Wait States	—	—	23	MHz	VDDIO = 5.0V
			1 Wait States	—	—	46
			2 Wait States	—	—	48
			0 Wait States	—	—	22	MHz	VDDIO = 3.3V
			1 Wait States	—	—	45
			2 Wait States	—	—	48
NVM_7	T_FPW	Program Cycle Time	Write Page	—	—	2.5	ms
NVM_9	T_CE		Erase Chip	—	—	260	ms
NVM_11	T_FER		Erase Row	—	—	6	ms
NVM_13	IDD_PROG	Supply Current during Programming of a page		—	—	1.2	mA	VDDIO=5.0V
NVM_15	IDD_ERASE	Supply Current during Erasing of a row		—	—	2.2	mA	VDDIO=5.0V
Note: Maximum FLASH operating frequencies are given in the table above, but are limited by the Embedded Flash access time when the processor is fetching code out of it. Theses tables provide the device maximum operating frequency defined by the field RWS of the NVMCTRL CTRLA register. This field defines the number of Wait states required to access the Embedded Flash Memory.