49.29 FLASH NVM AC Electrical Specifications
| AC Characteristics | Standard
Operating Conditions: VDD33 = VDDIO = AVDD = 1.9–3.6V (Unless Otherwise
Stated) Operating Temperature: -40°C ≤ TA ≤ +125°C for Extended Temperature | |||||||
|---|---|---|---|---|---|---|---|---|
| Parameter Number | Symbol | Characteristics | Min. | Typical | Max. | Units | Conditions | |
| NVM_1 | FRETEN | Flash Data Retention | 20 | — | — | Yrs | Under all conditions less than Absolute Maximum Ratings specifications | |
| NVM_3 | EP | Cell Endurance (Flash Erase and Wite Operation) | 20k | — | — | Cycles | ||
| Cell Endurance (Flash Erase/Retry and Write Operation) | 100k | — | — | Cycles | ||||
| NVM_5 | FREAD | Flash Read | 0 Wait States | — | — | 25.6 | MHz | VDDIO = 1.9V, CHECON.PFMWS[3:0] |
| 1 Wait States | — | — | 51.2 | |||||
| 2 Wait States | — | — | 76.8 | |||||
| 3 Wait States | — | — | 102.4 | |||||
| 4 Wait States | — | — | 128 | |||||
| 0 Wait States | — | — | 64 | MHz | VDDIO = 1.9V, CHECON.ADRWS | |||
| 1 Wait States | — | — | 128 | |||||
| NVM_7 | TFPW | Program Cycle Time | Write Row | — | — | 2.6 | ms | — |
| NVM_9 | TCE | Erase Chip | — | — | 20 | ms | — | |
| NVM_11 | TFEB | Erase Page | — | — | 10 | ms | 20K Endurance | |
| Erase Page | — | — | 10 | ms | 100K Endurance with Erase/Retry (maximum 8 pulses) | |||
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Note:
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